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DOI: https://doi.org/10.15407/techned2019.04.023

TECHNICAL FEATURES OF EQUIVALENT TESTS OF THYRISTOR VALVES OF STATIC VAR COMPENSATORS

Journal Tekhnichna elektrodynamika
Publisher Institute of Electrodynamics National Academy of Science of Ukraine
ISSN 1607-7970 (print), 2218-1903 (online)
Issue No 4, 2019 (July/August)
Pages 23 – 32

 

Authors
O. Shytov1, O. Burov2
1- PrJSC Zaporozhye plant Preobrazovatel,
str. Dneprovskoe Shosse, 9, Zaporozhye, 69069, Ukraine,
e-mail: Этот e-mail адрес защищен от спам-ботов, для его просмотра у Вас должен быть включен Javascript
2- PrJSC Zaporozhtransformator,
str. Dneprovskoe Shosse, 3, Zaporozhye, 69600, Ukraine,
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Abstract

The work of a specialized station with improved technical and economic characteristics for equivalent testing of symmetrically controlled thyristor valves used in static VAr compensators has been considered. Its power unit is equipped with a traditional low-voltage current circuit and an energy-efficient high-voltage oscillating circuit, made as a series resonant inverter according to a half-bridge circuit. On the basis of analysis of block diagram of the test station and equivalent schemes of the indicated circuits with the test thyristor valve analytical expressions for describing the electromagnetic processes occurring in its circuits were obtained, the parameters of the test station, necessary for testing the valves in the equivalent mode, were determined and the optimal control algorithms of the station were identified. The recommendations for testing the valves of thyristor-controlled reactors are developed and the corresponding results of field studies for given valve and station parameters are given. References 6, figures 5.

Key words: test station, thyristor valve, serial resonant inverter, thyristor-controlled reactor.

Received: 26.11.2018
Accepted: 02.05.2019
Published: 05.06.2019

 

References
1. Static var compensators (SVC) – Testing of thyristor valves. International standard IEC 61954:2011+AMD1:2013+AMD2:2017. 90 p.
2. Sheng B., Oliveira M., Bjarme H.-O. Synthetic test circuits for the operational tests of TCR and TSC thyristor valves. In Proc. T&D Conf. and Exposition IEEE/PES, April 21-24 2008, Chicago, Illinois, USA. Pp. 1–5.
3. Woodhouse M.L., Simanwe T. A new facility for testing HVDC and SVC thyristor valves. CIGRE 2006, B4-309. Pp. 1–9.
4. Tang G., Zha K., He Z., Wang H. Study on Operational Tests for FACTS Thyristor Valves. IEEE Trans. Power Del. 2013. Vol. 28. No 3. Pp. 1525-1532.  https://doi.org/10.1109/TPWRD.2013.2252370
5. Shytov Oleksandr, Xu Beibei, Zhang Xiaohui, Si Mingqi. Test station for detecting thyristor valve group. Patent WO 2013/113188 A1. 2013.
6. Shytov O.L., Burov O.M. The method of control the station for testing semiconductor valves. Patent UA No 116260. 2017. (Ukr)

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